| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | 04+31 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Output Current | |
| Storage Temperature |
The IR2125(S) is a high voltage, high speed power MOSFET and IGBT driver featuring over-current limiting protection circuitry. It is built using proprietary HVIC and latch immune CMOS technologies for rugged monolithic construction.
Key electrical specifications include a maximum offset voltage of 500V, a gate drive supply range of 12 to 18V, and input logic compatibility down to 2.5V. The device provides current detection and limiting to protect the driven power transistor and an error lead to indicate fault conditions.
The output driver is designed as a high pulse current buffer stage. The protection circuitry detects over-current and limits the gate drive voltage, with cycle-by-cycle shutdown programmed by an external capacitor. The floating channel can drive an N-channel power MOSFET or IGBT in high or low side configurations.
Available in 8-Lead PDIP and 16-Lead SOIC (Wide Body) packages, the IR2125 is suitable for various power control applications requiring robust driving and protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum offset voltage is 500V.
The gate drive supply voltage range is 12 to 18V.
The typical turn-on/off time is 150 ns.
The IR2125 is available in 8-Lead PDIP and 16-Lead SOIC (Wide Body) packages.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.