2SD2655 The Renesas 2SD2655 is an NPN transistor in a SOT23 package. It offers a maximum collector current of 1A and a collector-emitter voltage of 50V.
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2SD2655

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas 2SD2655 is an NPN transistor in a SOT23 package. It offers a maximum collector current of 1A and a collector-emitter voltage of 50V.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.99

2SD2655 Available from 1 distributor

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✓ Non-Authorised
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2SD2655 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SD2655 Description

Short technical summary and product information.

The Renesas 2SD2655 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose applications. It comes in a compact SOT23 surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a maximum collector current (Ic max) of 1A and a maximum collector-emitter voltage (Vce) of 50V. The transistor also features a maximum collector power dissipation (Pc) of 0.8W and a minimum forward current transfer ratio (hFE) of 200. Its transition frequency (ft) is 280 MHz, indicating suitability for moderate-frequency switching and amplification tasks.

 

The operating junction temperature (Tj) can reach up to 150°C, providing a good thermal operating range. The SOT23 package is a common choice for surface-mount technology, facilitating automated assembly processes.

 

This NPN transistor is a fundamental component in many electronic circuits, used for switching and amplification. Its specifications make it a versatile option for designers working on various projects requiring discrete semiconductor components.

2SD2655 Quick Information

Product Type: NPN Transistor
Series: 2SD2655
Canonical Name: Renesas 2SD2655 NPN Transistor
Subcategory: Bipolar (BJT) - Single

2SD2655 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD2655 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD2655 Features

  • NPN silicon bipolar junction transistor.
  • Maximum collector current of 1A.
  • Maximum collector-emitter voltage of 50V.
  • Compact SOT23 surface-mount package.
  • Minimum hFE of 200.

2SD2655 Applications

  • Suitable for general purpose switching circuits.
  • Used in low power audio amplifier stages.
  • Ideal for driver stage in power supplies.
  • Can be used in signal processing circuits.
  • Applied in DC-DC converter control circuits.

2SD2655 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SD2655?

The maximum collector-emitter voltage for the 2SD2655 is 50 V.

What is the maximum collector current for the Renesas 2SD2655?

The maximum collector current for the 2SD2655 is 1 A.

What is the maximum operating junction temperature of the 2SD2655?

The maximum operating junction temperature for the 2SD2655 is 150 °C.

What is the package type of the 2SD2655?

The 2SD2655 is supplied in an SOT23 case.

What is the mounting type for the 2SD2655?

The mounting type for the 2SD2655 is SMD (Surface Mount Device).

What is the typical transition frequency of the 2SD2655?

The typical transition frequency of the 2SD2655 is 280 MHz.

What is the minimum forward current transfer ratio (hFE) of the 2SD2655?

The minimum forward current transfer ratio (hFE) of the 2SD2655 is 200.

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