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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SD2655 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose applications. It comes in a compact SOT23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector current (Ic max) of 1A and a maximum collector-emitter voltage (Vce) of 50V. The transistor also features a maximum collector power dissipation (Pc) of 0.8W and a minimum forward current transfer ratio (hFE) of 200. Its transition frequency (ft) is 280 MHz, indicating suitability for moderate-frequency switching and amplification tasks.
The operating junction temperature (Tj) can reach up to 150°C, providing a good thermal operating range. The SOT23 package is a common choice for surface-mount technology, facilitating automated assembly processes.
This NPN transistor is a fundamental component in many electronic circuits, used for switching and amplification. Its specifications make it a versatile option for designers working on various projects requiring discrete semiconductor components.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SD2655 is 50 V.
The maximum collector current for the 2SD2655 is 1 A.
The maximum operating junction temperature for the 2SD2655 is 150 °C.
The 2SD2655 is supplied in an SOT23 case.
The mounting type for the 2SD2655 is SMD (Surface Mount Device).
The typical transition frequency of the 2SD2655 is 280 MHz.
The minimum forward current transfer ratio (hFE) of the 2SD2655 is 200.