| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,095,758 pcs
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1095758 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba RN1401.LFT is an NPN bipolar transistor belonging to the BRT (Built-in Resistor Transistor) type. It is housed in an SC59 package, suitable for Surface Mount Device (SMD) applications.
This transistor offers a collector-emitter voltage (Vce) of 50V and a continuous collector current (Ic) of 0.1A. Its power dissipation (Pd) is rated at 0.2W. The RN1401.LFT includes integrated base resistors with a value of 4.7kΩ, simplifying circuit design.
With a current gain (hFE) of 30 and a transition frequency (fT) of 250MHz, this component is suitable for various general-purpose switching and amplification tasks. The SMD mounting type and reel packaging facilitate automated assembly processes.
Key electrical characteristics include a base resistor (R1) and a base-emitter resistor (R1), both specified at 4.7kΩ. The transistor's design with built-in resistors can help reduce component count and simplify PCB layout in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50V.
The continuous collector current is 0.1A.
The power dissipation is 0.2W.
The RN1401.LFT is supplied in an SC59 package.
The RN1401.LFT is designed for SMD mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.