| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MATS 2SD199 is a silicon NPN transistor housed in a TO3 package. It is designed for applications requiring robust voltage handling capabilities.
Key electrical specifications include a maximum collector-base voltage of 800V and a maximum collector-emitter voltage of 550V. The maximum collector current is rated at 0.5A. The transistor has a minimum forward current transfer ratio (hFE) of 30 and a transition frequency of 10 MHz.
With a maximum power dissipation of 25W and a maximum operating junction temperature of 125°C, the 2SD199 is suitable for moderate power applications. It is mounted via through-hole method.
This component is classified under Bipolar (BJT) transistors and is suitable for general-purpose amplification and switching tasks where high voltage is a requirement.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SD199 is 550 V.
The maximum collector current for the 2SD199 is 0.5 A.
The maximum operating temperature for the 2SD199 is 140 °C.
The 2SD199 transistor is supplied in a TO3 package.
No, the 2SD199 is not a surface-mounted device; it is designed for through-hole mounting.
