| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB632K from Sanyo Denki is a silicon PNP bipolar junction transistor (BJT) housed in a TO-126 package. This component is suitable for various electronic switching and amplification circuits.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 35V and a maximum collector current (Ic) of 2A. The transistor offers a minimum forward current transfer ratio (hFE) of 60 and a maximum of 320. Its maximum power dissipation is rated at 10W, with a derating of 86mW/°C above ambient temperature.
The operating temperature range for the 2SB632K is up to 140°C, with a maximum junction temperature of 150°C. The component is designed for through-hole mounting.
This transistor is categorized under discrete semiconductor products, specifically within the single, pre-biased bipolar transistor subcategory. It is a reliable choice for engineers seeking a standard PNP transistor for their designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SB632K is 2A.
The maximum collector-emitter voltage for the 2SB632K is 35V.
The maximum operating temperature for the 2SB632K is 140°C.
The 2SB632K transistor is supplied in a TO-126 package.
The minimum forward current transfer ratio (hFE) for the 2SB632K is 60.