| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,852 pcs
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3852 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor 2SD1624S-TD-E is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 3A.
This transistor has a minimum DC collector/base gain (Hfe) of 100. The maximum power dissipation is rated at 500 mW (1/2 W). It is supplied in a SOT-89 surface-mount package and is typically supplied on a reel.
The 2SD1624S-TD-E is designed for general-purpose switching and amplification tasks within electronic circuits. Its SOT-89 package makes it suitable for applications where space is a consideration and surface-mount technology is employed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1624S-TD-E is 50V.
The continuous collector current rating for this transistor is 3A.
The minimum DC collector/base gain (Hfe) is 100.
The maximum power dissipation is 500 mW (1/2 W).
It is supplied in a SOT-89 package.
The 2SD1624S-TD-E is typically supplied on a reel.