| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The 2SD130 from Toshiba is a silicon NPN bipolar transistor. It is suitable for applications requiring a small signal transistor with specific electrical characteristics. The device is designed for surface mount applications and has 3 terminals.
Key electrical specifications include a maximum collector current of 700mA and a collector-emitter breakdown voltage of 15V. The typical collector-emitter saturation voltage is 500mV, and the maximum power dissipation is rated at 150mW. The operating temperature range spans from -55°C to 150°C.
This transistor is presented as a guide for applications, and it is not designed for use in equipment requiring specialized quality and reliability, or in hazardous environments, the aerospace industry, or the medical field. The product is a single-element transistor.
Mounting is surface mount. The product is described as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD130 is 700mA.
The collector-emitter breakdown voltage for the 2SD130 is 15V.
The typical collector-emitter saturation voltage is 500mV.
The maximum power dissipation for the 2SD130 is 150mW.
The operating temperature range for the 2SD130 is -55°C to 150°C.
The 2SD130 is an NPN bipolar transistor.
The 2SD130 is designed for surface mount.
