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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1110 from NEC is a silicon NPN power transistor suitable for audio frequency power amplifier applications. It offers a robust collector-emitter breakdown voltage of 120V and can handle a continuous collector current of up to 7A.
Key electrical characteristics include a collector-emitter saturation voltage of 2.0V and a base-emitter saturation voltage of 2.0V under specific test conditions. The DC current gain (hFE) ranges from 20 at low currents to 40-200 at higher currents, indicating good linearity. The transistor also has an output capacitance of 190pF and a current-gain-bandwidth product of 15MHz.
With a maximum power dissipation of 80W at 25°C (TC) and a junction temperature rating of 150°C, the 2SD1110 is designed for demanding applications. It is housed in a TO-92 package, making it suitable for through-hole mounting.
This transistor is a complement to the 2SB849 type, offering design flexibility in complementary push-pull amplifier circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) of the 2SD1110 is a minimum of 120V.
The 2SD1110 can handle a continuous collector current (IC) of up to 7A.
The collector power dissipation (PC) for the 2SD1110 is 80W at a case temperature of 25°C.
The collector-emitter saturation voltage (VCE(sat)) is typically 2.0V, and the base-emitter saturation voltage (VBE(sat)) is also typically 2.0V under the specified test conditions.
The 2SD1110 is supplied in a TO-92 package.