| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
565,000 pcs
|
565000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
443 pcs
|
443 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Forward Current | |
| Junction Temperature | |
| Power Dissipation | |
| Reverse Recovery Time | |
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| Weight |
The Toshiba HN1D04FU is a silicon epitaxial planar diode designed for ultra high speed switching applications. It features a maximum reverse voltage of 85V and a typical reverse recovery time of 1.6ns, making it suitable for demanding electronic circuits.
Key electrical characteristics include a low forward voltage, with a typical value of 0.90V at 100mA, and a small total capacitance of 0.9pF at VR=0 and f=1MHz. The diode has an average forward current rating of 100mA and a maximum peak forward current of 300mA.
With a power dissipation of 200mW and a junction temperature rating of 150°C, the HN1D04FU is built for reliable operation. The storage temperature range is -55°C to 150°C. The component is housed in a US6 package, weighing approximately 6.8g.
This diode is ideal for applications requiring rapid switching and minimal signal delay, contributing to efficient and high-performance electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal reverse voltage of the HN1D04FU is 80V.
The maximum reverse voltage for the HN1D04FU is 85V.
The average forward current of the HN1D04FU is 100mA.
The maximum peak forward current for the HN1D04FU is 300mA.
The typical forward voltage of the HN1D04FU at 1mA is 0.60V.
The typical reverse recovery time of the HN1D04FU is 1.6ns.
The power dissipation of the HN1D04FU is 200mW.