| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Tape & Reel |
The Toshiba 2SC2859-O is an NPN Bipolar Transistor (BJT) housed in a SOT-23 package. This transistor is characterized by its maximum Collector-Emitter Voltage (VCEO) of 30V and a continuous Collector Current (IC) of 500mA. It also features a Collector-Base Voltage (VCBO) of 35V and an Emitter-Base Voltage (VEBO) of 5V.
Thermal characteristics include a maximum Collector Power Dissipation of 150mW at TA = 25°C and a maximum Junction Temperature of 150°C. The device has a typical Transition Frequency (fT) of 300MHz and a DC Current Gain (hFE) ranging from 70 to 400, with a specific range of 70 to 140 also noted. It is supplied in Tape & Reel packaging with a standard quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector to Emitter Voltage (VCEO) for the 2SC2859-O is 30V.
The continuous Collector Current (IC) for the 2SC2859-O is 500mA.
The maximum Collector Power Dissipation is 150mW when measured at TA = 25°C.
The maximum Junction Temperature is 150°C, and the Storage Temperature ranges from -55°C to 150°C.
The DC Current Gain (hFE) ranges from 70 to 400, with a specific range of 70 to 140 also noted.
The typical Transition Frequency (fT) for the 2SC2859-O is 300MHz.
The 2SC2859-O is supplied in a SOT-23 package.