2SC5508-T2B-A 2SC5508-T2B-A is an NPN RF transistor manufactured by Renesas. It is designed for RF amplification in wireless and communication circuits.
Mfr Part #:

2SC5508-T2B-A

Available from 3 distributors
Mfr Name: Renesas
Renesas
2SC5508-T2B-A is an NPN RF transistor manufactured by Renesas. It is designed for RF amplification in wireless and communication circuits.
✓ Total Stock: 658,005 pcs
$ Price Range: $0.53

2SC5508-T2B-A Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
602,667 pcs
602667 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
50,000 pcs
50000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,338 pcs
5338 pcs On Request 1 On Request On Request 20+ On Request On Request

2SC5508-T2B-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Transistor Type

2SC5508-T2B-A Description

Short technical summary and product information.

The 2SC5508-T2B-A is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. Manufactured by Renesas, this transistor is suitable for use in high-frequency amplification stages within wireless communication systems, RF front-ends, and other signal processing circuits.

 

As an NPN device, it operates with positive collector voltage relative to the emitter, making it compatible with standard biasing configurations. The part is categorized under RF transistors, indicating its optimization for high-frequency performance.

 

While detailed electrical specifications such as breakdown voltages, current ratings, and transition frequency are not available in the current data, the transistor type and manufacturer are confirmed. Designers should consult the official datasheet for complete parameters to ensure proper circuit integration.

2SC5508-T2B-A Quick Information

Product Type: RF Transistor
Canonical Name: 2SC5508-T2B-A NPN RF Transistor
Subcategory: RF Transistor

2SC5508-T2B-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SC5508-T2B-A Estimated Pricing

Qty Low High
568+ $0.53 $0.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5508-T2B-A Features

  • NPN silicon RF transistor.
  • Designed for RF amplification.
  • Manufactured by Renesas.

2SC5508-T2B-A Applications

  • Used in RF amplifier circuits.
  • Suitable for wireless communication.
  • Ideal for signal processing stages.

2SC5508-T2B-A FAQs

1 frequently asked questions generated from this part’s specifications.
What type of transistor is the 2SC5508-T2B-A?

It is an NPN bipolar junction transistor designed for RF applications.

2SC5508-T2B-A Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
MCH4009-TL-H
MCH4009-TL-H
On Semiconductor
The ON Semiconductor MCH4009-TL-H is an RF NPN transistor designed for high-frequency applications. It features a 3.5V operating voltage and a 25GHz frequency.
View Part
SBC847CLT1
SBC847CLT1
On Semiconductor
The On Semiconductor SBC847CLT1 is an NPN bipolar transistor designed for RF applications. It features a 45V collector-emitter voltage and 100mA collector current.
View Part
KST10MTF
KST10MTF
On Semiconductor
The On Semiconductor KST10MTF is an NPN RF transistor designed for VHF/UHF applications. It features a 25V collector-emitter voltage and a 650MHz gain bandwidth product.
View Part
MMBTH10LT1G
MMBTH10LT1G
On Semiconductor
The MMBTH10LT1G is an NPN RF transistor from On Semiconductor, designed for VHF/UHF applications. It features a 25V collector-emitter voltage and a 650MHz transition frequency, housed in a compact SOT-23-3 package.
View Part
Home
Account

Categories