| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
589,020 pcs
|
589020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
2,954 pcs
|
2954 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
125 pcs
$0.13
|
125 pcs |
$0.13
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The MMBTH10LT1G is an NPN silicon RF transistor manufactured by On Semiconductor, suitable for VHF and UHF applications. It offers a maximum collector-emitter voltage of 25V and a transition frequency of 650MHz, making it effective for signal amplification and switching tasks.
This device is supplied in a surface-mount SOT-23-3 (TO-236) package, which is ideal for space-constrained designs. The operating temperature range is -55°C to +150°C. The transistor exhibits a minimum DC current gain (hFE) of 60 at 4mA and 10V, with a maximum collector-emitter saturation voltage of 0.5V.
Environmental compliance includes RoHS3 compliance, Pb-Free, and Halogen Free/BFR Free status. The standard package quantity is 3,000 units per reel. Its small footprint and robust specifications make it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTH10LT1G has a collector-emitter voltage rating of 25V.
The MMBTH10LT1G operates within a temperature range of -55°C to +150°C.
The MMBTH10LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.
Yes, the MMBTH10LT1G is RoHS3 Compliant.
The transition frequency of the MMBTH10LT1G is 650MHz.
The minimum DC current gain (hFE) for the MMBTH10LT1G is 60 at 4mA collector current and 10V collector-emitter voltage.