MMBTH10LT1G The MMBTH10LT1G is an NPN RF transistor from On Semiconductor, designed for VHF/UHF applications. It features a 25V collector-emitter voltage and a 650MHz transition frequency, housed in a compact SOT-23-3 package.
Mfr Part #:

MMBTH10LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTH10LT1G is an NPN RF transistor from On Semiconductor, designed for VHF/UHF applications. It features a 25V collector-emitter voltage and a 650MHz transition frequency, housed in a compact SOT-23-3 package.
✓ Total Stock: 592,099 pcs
$ Price Range: $0.13

MMBTH10LT1G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
589,020 pcs
589020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,954 pcs
2954 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
125 pcs
$0.13 ℹ
Qty Price
0+ 0.13
125 pcs $0.13
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0+ 0.13
1 On Request On Request On Request On Request On Request

MMBTH10LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage

MMBTH10LT1G Description

Short technical summary and product information.

The MMBTH10LT1G is an NPN silicon RF transistor manufactured by On Semiconductor, suitable for VHF and UHF applications. It offers a maximum collector-emitter voltage of 25V and a transition frequency of 650MHz, making it effective for signal amplification and switching tasks.

 

This device is supplied in a surface-mount SOT-23-3 (TO-236) package, which is ideal for space-constrained designs. The operating temperature range is -55°C to +150°C. The transistor exhibits a minimum DC current gain (hFE) of 60 at 4mA and 10V, with a maximum collector-emitter saturation voltage of 0.5V.

 

Environmental compliance includes RoHS3 compliance, Pb-Free, and Halogen Free/BFR Free status. The standard package quantity is 3,000 units per reel. Its small footprint and robust specifications make it a versatile component for various electronic circuits.

MMBTH10LT1G Quick Information

Product Type: RF Transistor
Series: MMBT
Canonical Name: NPN RF Transistor MMBTH10LT1G
Subcategory: RF Transistor

MMBTH10LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTH10LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTH10LT1G Features

  • NPN silicon RF transistor.
  • 25V collector-emitter voltage.
  • 650MHz transition frequency.
  • SOT-23-3 surface mount package.
  • RoHS3, Pb-Free, Halogen Free.

MMBTH10LT1G Applications

  • Suitable for VHF/UHF applications.
  • Used in signal amplification circuits.
  • Effective for low-power switching.
  • Ideal for space-constrained devices.

MMBTH10LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MMBTH10LT1G?

The MMBTH10LT1G has a collector-emitter voltage rating of 25V.

What is the operating temperature range of the MMBTH10LT1G transistor?

The MMBTH10LT1G operates within a temperature range of -55°C to +150°C.

What package type is the MMBTH10LT1G supplied in?

The MMBTH10LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.

Is the MMBTH10LT1G RoHS compliant?

Yes, the MMBTH10LT1G is RoHS3 Compliant.

What is the transition frequency of the MMBTH10LT1G?

The transition frequency of the MMBTH10LT1G is 650MHz.

What is the minimum DC current gain (hFE) for the MMBTH10LT1G?

The minimum DC current gain (hFE) for the MMBTH10LT1G is 60 at 4mA collector current and 10V collector-emitter voltage.

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