DistyParts Icon
KST10MTF The On Semiconductor KST10MTF is an NPN RF transistor designed for VHF/UHF applications. It features a 25V collector-emitter voltage and a 650MHz gain bandwidth product.
Mfr Part #:

KST10MTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KST10MTF is an NPN RF transistor designed for VHF/UHF applications. It features a 25V collector-emitter voltage and a 650MHz gain bandwidth product.
✓ Total Stock: 778,701 pcs
$ Price Range: $0.99

KST10MTF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
505,701 pcs
On Request
505701 pcs On Request 1 On Request On Request 20+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
273,000 pcs
On Request
273000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

KST10MTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
View Similar Products (0)

KST10MTF Description

Short technical summary and product information.

The On Semiconductor KST10MTF is an NPN epitaxial silicon transistor designed for RF applications, particularly in VHF and UHF frequencies. It offers a collector-emitter voltage (VCEO) of 25V and a collector-base voltage (VCBO) of 30V. The transistor has a maximum power dissipation of 350mW and a minimum DC current gain (hFE) of 60 at 4mA and 10V.

 

Key electrical characteristics include a current gain bandwidth product (fT) of 650MHz at 100MHz, a collector-emitter saturation voltage (VCE(sat)) of 0.5V, and a base-emitter on-voltage (VBE(on)) of 0.95V. Output capacitance (Cob) is 0.7pF and common-base feedback capacitance (Crb) is 0.65pF.

 

This device is supplied in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. It operates within a storage temperature range of -65°C to 150°C. The KST10MTF is Pb-Free compliant.

KST10MTF Quick Information

Product Type: NPN Transistor
Series: KST10
Canonical Name: On Semiconductor KST10MTF NPN Epitaxial Silicon Transistor
Subcategory: RF Transistors

KST10MTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KST10MTF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KST10MTF Features

  • NPN epitaxial silicon transistor for RF.
  • 25V collector-emitter voltage rating.
  • 650MHz gain bandwidth product.
  • 350mW maximum power dissipation.
  • Compact SOT-23-3 surface mount package.

KST10MTF Applications

  • Suitable for high-frequency RF amplification.
  • Used in VHF/UHF transistor applications.
  • Ideal for signal switching in communication devices.
  • Applicable in low-power amplification circuits.
  • Suitable for surface-mount RF circuit designs.

KST10MTF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the KST10MTF?

The maximum collector-base voltage is 30 V and the collector-emitter voltage is 25 V.

What package does the KST10MTF come in?

It comes in a SOT-23-3 surface-mount package.

What is the maximum frequency for the KST10MTF?

It operates at a maximum frequency of 650 MHz.

Is the KST10MTF RoHS compliant?

Yes, it is RoHS3 compliant.

What is the power dissipation of the KST10MTF?

The maximum power dissipation is 350 mW.

Home
Account

Categories