| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,985 pcs
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1985 pcs | On Request | 1 | On Request | On Request | 1132+ | On Request | On Request | |
|
620 pcs
|
620 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
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The 2SC3179 from Sanken is a Silicon NPN Triple Diffused Planar Transistor, serving as a complementary component to the 2SA1262. It is engineered for audio and general-purpose applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a collector current (IC) of up to 4A. The device offers a maximum power dissipation of 30W at 25°C case temperature and an operating junction temperature up to 150°C. The DC current gain (hFE) is typically 15 at VCE=4V and IC=1A, with a minimum of 40. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.6V at IC=2A and IB=0.2A.
This transistor is housed in a TO-220 package, suitable for through-hole mounting. Its typical transition frequency (fT) is 60MHz at VCE=12V and IE=–0.2A, and it has an output capacitance (COB) of 15pF at VCB=10V and f=1MHz.
The 2SC3179 is designed for reliable performance in various electronic circuits requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC3179 is 60V.
The maximum continuous collector current (IC) for the 2SC3179 is 4A.
The maximum power dissipation (PD) for the 2SC3179 is 30W at 25°C case temperature.
The 2SC3179 transistor comes in a TO-220 package.
The typical DC current gain (hFE) of the 2SC3179 is 15 at VCE=4V and IC=1A.