HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The NEC 2SC2719 is a single NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector emitter voltage of 80V and can handle a maximum collector current of 300mA. The device has a maximum power dissipation rating of 600mW and an operating temperature range up to 150°C.
With its 3 terminals, the 2SC2719 is suitable for general-purpose amplification and switching circuits. Its specifications make it a reliable component for designers working with discrete semiconductor products. The transistor is manufactured by NEC, a known provider of electronic components.
This transistor is part of the broader category of discrete semiconductor products, specifically single BJT transistors. Its electrical characteristics, such as collector emitter saturation voltage of 600mV, are important considerations for circuit design. The component is typically housed in a package with 3 terminals, facilitating integration into standard circuit boards.
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| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the 2SC2719 is 80V.
The 2SC2719 transistor has a maximum collector current of 300mA.
The maximum power dissipation for the 2SC2719 is 600mW.
The 2SC2719 can operate at temperatures up to 150°C.
The 2SC2719 has 3 terminals.
