| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC1212 from HIT is an NPN epitaxial silicon transistor designed for use in low frequency power amplifier applications. It is housed in a TO-126 MOD package, facilitating easy mounting and integration into electronic circuits.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of up to 80V and a maximum collector current (IC) of 11A. The DC current transfer ratio (hFE) ranges from 60 to 200 at 50mA collector current and 4V VCE. The transistor also exhibits a typical gain bandwidth product (fT) of 160MHz at 30mA collector current and 4V VCE.
Absolute maximum ratings specify a junction temperature of 150°C and a storage temperature range of -55°C to +150°C. The collector power dissipation is rated at 0.75W at 25°C ambient temperature, with a higher rating of 8W at 25°C case temperature.
This transistor is suitable for various amplification tasks where moderate power handling and specific voltage/current characteristics are required. Its construction and ratings make it a reliable component for power amplification stages in audio equipment, control systems, and other general-purpose amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC1212 is 80V.
The maximum collector current (IC) for the 2SC1212 is 11A.
The 2SC1212 transistor is supplied in a TO-126 MOD package.
The typical gain bandwidth product (fT) for the 2SC1212 is 160MHz.
The storage temperature range for the 2SC1212 is -55°C to +150°C.
