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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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The FJX2222A is a general-purpose NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. It is designed for a wide range of applications and features a collector-emitter voltage (VCEO) of 40V and a maximum collector current (IC) of 600mA.
Key electrical characteristics include a DC current gain (hFE) up to 300 at 150mA, a collector-emitter saturation voltage (VCE(sat)) as low as 0.3V at 150mA, and a current gain bandwidth product (fT) of 300MHz at 20mA. The transistor also exhibits a noise figure of 4dB and turn-on/turn-off times of 35ns and 285ns, respectively.
This transistor is housed in a compact SC70-3 surface mount package and is supplied on tape and reel. Its thermal characteristics include a power dissipation of 325mW and a junction-to-ambient thermal resistance of 385°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) is 40 V minimum.
The FJX2222A is packaged in an SC70-3 surface-mount package.
The maximum collector current is 600 mA.
The DC current gain is 100 to 300 at VCE = 10 V, IC = 150 mA.
The collector-emitter saturation voltage is 0.3 V maximum at IC = 150 mA, IB = 15 mA.
The typical turn-on time is 35 ns and turn-off time is 285 ns under specified test conditions.
The power dissipation is 325 mW.