LMBTA56LT1G The LMBTA56LT1G is a PNP Silicon Transistor from LRC Leshan Radio Co Ltd, designed for general-purpose applications. It features a VCEO of -80V and a continuous collector current of -500mA.
Mfr Part #:

LMBTA56LT1G

Available from 1 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LMBTA56LT1G is a PNP Silicon Transistor from LRC Leshan Radio Co Ltd, designed for general-purpose applications. It features a VCEO of -80V and a continuous collector current of -500mA.
Total Stock: 9,507 pcs

LMBTA56LT1G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,507 pcs
9507 pcs On Request 1 On Request On Request 12+ On Request 2026-06-03 16:15:09

LMBTA56LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Junction Temperature
Lead Style
SVHC Present
Storage Temperature
Thermal Resistance

LMBTA56LT1G Description

Short technical summary and product information.

The LMBTA56LT1G is a PNP Silicon Transistor manufactured by LRC Leshan Radio Co., Ltd. This component is suitable for various electronic applications requiring a bipolar junction transistor.

 

Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -80V and a continuous collector current (IC) of -500mA. The DC current gain (HFE) is specified at 100 for both -10mA and -100mA collector currents. The collector-emitter saturation voltage (VCE(sat)) is a maximum of -0.25V at -100mA collector current and -10mA base current. The base-emitter turn-on voltage (VBE(on)) is typically -1.2V at -100mA collector current and -1V collector-emitter voltage. The current-gain bandwidth product (fT) is a minimum of 50MHz at -100mA collector current and -1V collector-emitter voltage.

 

This transistor is housed in a SOT-23 package, making it suitable for surface-mount applications. The device operates within a junction temperature range of -55°C to +150°C and a storage temperature range of -55°C to +150°C. The total power dissipation is rated at 409mW at 25°C ambient temperature on an FR-4 board, with a thermal resistance of 305°C/W.

 

The LMBTA56LT1G is declared to be RoHS compliant and Halogen Free.

LMBTA56LT1G Quick Information

Product Type: PNP Silicon Transistor
Canonical Name: LMBTA56LT1G PNP Silicon Transistor
Subcategory: Bipolar (BJT) - Single

LMBTA56LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LMBTA56LT1G Features

  • PNP Silicon Transistor
  • Collector-Emitter Voltage: -80V
  • Continuous Collector Current: -500mA
  • SOT-23 Package
  • RoHS and Halogen Free compliant

LMBTA56LT1G Applications

  • General purpose PNP switching transistor.
  • Driver for small relays and loads.
  • Medium voltage amplifier stage transistor.
  • Used in signal amplification circuits.

LMBTA56LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) for the LMBTA56LT1G?

The collector-emitter breakdown voltage (VCEO) for the LMBTA56LT1G is -80V.

What is the continuous collector current (IC) rating for the LMBTA56LT1G?

The continuous collector current (IC) rating for the LMBTA56LT1G is -500mA.

What is the DC current gain (HFE) of the LMBTA56LT1G?

The DC current gain (HFE) of the LMBTA56LT1G is 100 at IC = -10 mA, VCE = -1 V and at IC = -100 mA, VCE = -1 V.

What is the package type for the LMBTA56LT1G transistor?

The LMBTA56LT1G transistor is supplied in a SOT-23 package.

What is the operating temperature range for the LMBTA56LT1G?

The operating temperature range for the LMBTA56LT1G is -55°C to +150°C.

Is the LMBTA56LT1G RoHS compliant?

Yes, the LMBTA56LT1G is declared to be RoHS compliant.

Is the LMBTA56LT1G Halogen Free?

Yes, the LMBTA56LT1G is declared to be Halogen Free.

Home
Account

Categories