| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB974 from NEC is a Silicon PNP Darlington Power Transistor housed in an ITO-220 package. This component is engineered for applications requiring low frequency power amplification and low speed power switching.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -100V and a maximum collector current (IC) of -5A. It boasts a high DC current gain (hFE) ranging from 2000 to 20000 under specific test conditions (IC=-2A, VCE=-2V). The collector-emitter saturation voltage (VCEsat) is a low -1.5V at IC=-2A and IB=-2mA, contributing to efficient power handling.
The transistor has a maximum power dissipation of 1.5W at 25°C ambient temperature, and 30W when the case temperature is 25°C. The junction temperature is rated up to 150°C, with a storage temperature range of -55°C to 150°C.
Designed with a Darlington configuration, the 2SB974 is suitable for circuits where high current gain is essential. Its ITO-220 package facilitates through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB974 is -100V.
The maximum collector current (IC) for the 2SB974 is -5A.
The DC current gain (hFE) of the 2SB974 is between 2000 and 20000 when measured at IC=-2A and VCE=-2V.
The 2SB974 transistor is supplied in an ITO-220 package.
The 2SB974 is suitable for low frequency power amplification and low speed power switching applications.
