2SB856 The Hitachi 2SB856 is a silicon PNP power transistor. It offers a maximum collector-emitter voltage of 50V and a maximum collector current of 3A.
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2SB856

Available from 1 distributors
Mfr Name: Hitachi
Hitachi
The Hitachi 2SB856 is a silicon PNP power transistor. It offers a maximum collector-emitter voltage of 50V and a maximum collector current of 3A.
✓ Total Stock: 2 pcs
$ Price Range: $0.99

2SB856 Available from 1 distributor

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✓ Non-Authorised
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2 pcs
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2SB856 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Operating Temperature
Power Dissipation

2SB856 Description

Short technical summary and product information.

The 2SB856 from Hitachi is a silicon PNP power transistor designed for various electronic applications. This component features a maximum collector-emitter voltage rating of 50V and can handle a maximum collector current of 3A. Its maximum power dissipation is rated at 25W, making it suitable for moderate power applications.

 

The transistor operates within a maximum temperature of 150°C. It has 3 terminals and is manufactured by SavantIC. The 2SB856 is part of the broader category of discrete semiconductor products, specifically single bipolar junction transistors.

 

This transistor is often used in power amplification and switching circuits where a PNP type transistor is required. Its specifications make it a versatile component for designers working with power electronics.

2SB856 Quick Information

Product Type: Transistor
Canonical Name: 2SB856 Silicon PNP Power Transistor
Subcategory: Single

2SB856 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB856 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB856 Features

  • Silicon PNP power transistor
  • 50V maximum collector-emitter voltage
  • 3A maximum collector current
  • 25W maximum power dissipation
  • 150°C maximum operating temperature

2SB856 Applications

  • Suitable for high-current switching applications.
  • Used in power amplifier circuits.
  • Ideal for motor control and regulation.
  • Applicable in audio power amplification.
  • Suitable for high-temperature environments.

2SB856 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2SB856 transistor?

The maximum collector-emitter voltage for the 2SB856 transistor is 50V.

What is the maximum collector current of the 2SB856?

The maximum collector current for the 2SB856 transistor is 3A.

What is the maximum power dissipation for the 2SB856 transistor?

The maximum power dissipation for the 2SB856 transistor is 25W.

What is the maximum operating temperature of the 2SB856 transistor?

The maximum operating temperature for the 2SB856 transistor is 150°C.

How many terminals does the 2SB856 transistor have?

The 2SB856 transistor has 3 terminals.

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The MJE370 is a PNP type silicon epitaxial-base transistor from SGS-THOMSON, suitable for general purpose amplifier and switching applications. It features a 3A maximum collector current and 30V collector-emitter voltage.
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The Panasonic 2SB713 is a Silicon PNP Power Transistor designed for high power amplifier applications. It comes in a TO-3PN package.
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