| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Transistor Type |
The Panasonic 2SB713 is a Silicon PNP Power Transistor suitable for high power amplifier applications. This component features a TO-3PN package, offering a wide area of safe operation and excellent linearity of hFE.
With a power dissipation rating of 25W and an operating temperature range up to 150°C, the 2SB713 is built for demanding applications. Its PNP silicon epitaxal base mesa transistor construction ensures reliable performance.
This transistor is designed for use in audio frequency power amplifier and low speed switching applications. The TO-3PN package is a standard for power transistors, facilitating mounting and heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SB713 is a PNP Silicon Epitaxal Base Mesa Transistor.
The 2SB713 comes in a TO-3PN package.
The 2SB713 has a maximum power dissipation of 25W.
The 2SB713 can operate in a temperature range up to 150°C.
The 2SB713 is designed for high power amplifier applications, including audio frequency power amplifiers and low speed switching.