| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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49 pcs
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49 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE370 is a PNP type silicon epitaxial-base transistor manufactured by SGS-THOMSON. It is designed for general purpose amplifier and switching circuits. This transistor can handle a maximum collector current of 3A and a collector-emitter voltage of up to 30V.
With a maximum power dissipation of 25W and a maximum operating temperature of 150°C, the MJE370 is suitable for various electronic applications. It comes in a TO-126 plastic package and is designed for through-hole mounting.
This component is part of the MJE series, known for its power transistor capabilities. Its complementary NPN type is the MJE520. The MJE370 is a reliable choice for designers needing a general-purpose PNP transistor for amplification and switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MJE370 is 3A.
The MJE370 has a maximum collector-emitter voltage of 30V.
The maximum power dissipation for the MJE370 is 25W.
The MJE370 can operate at a maximum temperature of 150°C.
The MJE370 is supplied in a TO-126 plastic package.
The MJE370 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJE370 is 1 Unlimited.