| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,100 pcs
|
11100 pcs | On Request | 1 | On Request | On Request | 2012 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature |
The 2SB816 from MOSPEC is a PNP Silicon Power Transistor. It is engineered for robust performance with a maximum collector current rating of 8A and a collector-emitter voltage of 120V. This transistor can handle a maximum power dissipation of 80W, making it suitable for various power switching and amplification tasks.
With 3 terminals, the 2SB816 is designed for through-hole mounting. Its operating temperature can reach up to 140°C, ensuring reliability in demanding environments. This component is part of the discrete semiconductor product category, specifically within single bipolar junction transistors.
Key electrical characteristics include a maximum collector current of 8A and a maximum collector-emitter voltage of 120V. The maximum power dissipation is rated at 80W, and it can operate at temperatures up to 140°C. The device features 3 terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SB816 is 8A.
The collector-emitter voltage rating for the 2SB816 is 120V.
The maximum power dissipation for the 2SB816 is 80W.
The maximum operating temperature for the 2SB816 is 140°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.
