| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation |
The Toshiba 2SB753 is a silicon PNP bipolar transistor. It is manufactured by Toshiba and comes in a TO-220AB package, suitable for through-hole mounting.
Key electrical specifications include a maximum collector emitter voltage of 80V and a maximum collector current of 7A. The device can handle a maximum power dissipation of 40W and has a maximum operating temperature of 140°C. It features 3 terminals.
This transistor is part of the broader category of discrete semiconductor products, specifically within transistors. Its specifications make it suitable for various power switching and amplification applications where a PNP silicon transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the 2SB753 is 80V.
The maximum collector current for the 2SB753 is 7A.
The maximum power dissipation for the 2SB753 is 40W.
The maximum operating temperature for the 2SB753 is 140°C.
The 2SB753 transistor is in a TO-220AB package.