| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NEC 2SA1120 is a Silicon PNP Power Transistor housed in a TO-126 package. This component is designed for applications such as audio power amplifiers, offering a high transition frequency and low collector saturation voltage.
Key electrical characteristics include a maximum collector current of 5A and a maximum power dissipation of 5W at 25°C case temperature. The collector-emitter breakdown voltage is -35V, and the DC current gain (hFE) is a minimum of 200 at IC=-500mA, VCE=-2V, and 70 at IC=-4A, VCE=-2V. The transition frequency (fT) is typically 170 MHz.
The transistor operates with a junction temperature up to 150°C and has a storage temperature range of -55°C to +150°C. Its TO-126 package is suitable for through-hole mounting.
This PNP transistor is a reliable choice for power amplification circuits where its specific voltage, current, and frequency characteristics are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA1120 is 5A.
The maximum power dissipation of the 2SA1120 at 25°C case temperature is 5W.
The collector-emitter breakdown voltage of the 2SA1120 is -35V.
The transition frequency of the 2SA1120 is typically 170MHz.
The 2SA1120 transistor is supplied in a TO-126 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.