| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1039 from NEC is a Silicon PNP transistor designed for various electronic applications. It comes in a TO220 package, suitable for through-hole mounting.
Key electrical specifications include a maximum collector current (Ic max) of 4A and a maximum collector-emitter voltage (Vce) of 80V. The maximum collector power dissipation (Pd) is rated at 40W. The device operates within a maximum junction temperature of 175°C and an ambient operating temperature of up to 150°C.
This transistor features a minimum forward current transfer ratio (hFE) of 40 and a transition frequency (ft) of 10 MHz. The maximum collector-base voltage (Vcb) is 100V, and the maximum emitter-base voltage (Veb) is 4V.
It is a non-surface-mounted component, making it suitable for applications requiring through-hole assembly. The 2SB1039 is a reliable choice for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic max) for the 2SB1039 is 4A.
The maximum collector-emitter voltage (Vce) for the 2SB1039 is 80V.
The maximum power dissipation (Pd) for the 2SB1039 is 40W.
The maximum operating junction temperature (Tj) for the 2SB1039 is 175°C.
The 2SB1039 transistor is supplied in a TO220 package.
No, the 2SB1039 is not a surface-mounted device.
