| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Tape & Reel |
HAT2026R-EL-E is an N-Channel power MOSFET manufactured by Renesas. It has a drain-source breakdown voltage of 20V and a continuous drain current rating of 11A at 25°C. The typical drain-source on-resistance is 15mΩ at a gate-source voltage of 4V, making it suitable for low-voltage switching circuits.
The device features a typical gate threshold voltage of 1.4V at 1mA and an input capacitance of 1760pF at Vds=10V. Power dissipation is rated at 2.5W at ambient temperature, and the maximum operating temperature is 150°C.
Housed in an 8-SOIC package, the HAT2026R-EL-E is designed for surface-mount assembly and is available in tape and reel packaging. Its low on-resistance and low-threshold voltage make it appropriate for load switching and power management in compact electronic products.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8-SOIC surface mount package.
150°C.
20V at 25°C.
11A at 25°C.
15mΩ at Vgs=4V.
1.4V at 1mA.
1760pF at Vds=10V.