IPA60R180P7S
Infineon
The Infineon IPA60R180P7S is a 650V N-channel CoolMOS P7 Power MOSFET. It offers low switching and conduction losses, making it efficient for various power applications.
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA968 is a silicon PNP power transistor designed for power amplifier applications and driver stages. It comes in a TO-220 package, suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 200V and a maximum continuous collector current (IC) of 1.5A. The device also features a maximum power dissipation (PT) of 25W at 25℃ (TC) and a maximum junction temperature of 150℃. The collector-emitter saturation voltage (VCEsat) is a maximum of 1.5V, and the DC current gain (hFE) typically ranges from 70 to 240 under specified conditions.
This transistor is a complement to the 2SC2238 type. Its high breakdown voltage makes it suitable for various amplification circuits. The TO-220 package provides a robust solution for power applications.
Applications include power amplification and driver stages where a reliable PNP transistor is required.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SA968 is 200V.
The maximum continuous collector current (IC) for the 2SA968 is 1.5A.
The total power dissipation (PT) for the 2SA968 is 25W at 25℃ (TC).
The 2SA968 transistor is supplied in a TO-220 package.
The typical DC current gain (hFE) of the 2SA968 transistor is between 70 and 240 when measured at IC=-100mA and VCE=-5V.
