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IPA60R180P7S The Infineon IPA60R180P7S is a 650V N-channel CoolMOS P7 Power MOSFET. It offers low switching and conduction losses, making it efficient for various power applications.
Mfr Part #:

IPA60R180P7S

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R180P7S is a 650V N-channel CoolMOS P7 Power MOSFET. It offers low switching and conduction losses, making it efficient for various power applications.
✓ Total Stock: 10,903 pcs
$ Price Range: $0.71

IPA60R180P7S Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
6,460 pcs
On Request
6460 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,238 pcs
On Request
3238 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
1,005 pcs
On Request
1005 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
200 pcs
On Request
200 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPA60R180P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Storage Temperature
Tape & Reel
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IPA60R180P7S Description

Short technical summary and product information.

The Infineon IPA60R180P7S is a 650V N-channel Power MOSFET from the CoolMOS P7 series. This 7th generation platform is designed using the superjunction principle, offering a revolutionary technology for high-voltage power MOSFETs.

 

Key electrical characteristics include a maximum Drain Source Voltage (VDS) of 650V, a maximum On-Resistance (RDS(on)) of 180mΩ, and a typical Gate Charge (Qg) of 25nC. The device also features a pulsed drain current (ID,pulse) of 53A and an energy in Eoss of 2.9 µJ at 400V.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages due to its outstanding commutation ruggedness. It provides a significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler switching applications. The device exhibits excellent ESD robustness greater than 2kV (HBM).

 

Packaged in a PG-TO220-3-FP, the IPA60R180P7S is designed for through-hole mounting. Its benefits include ease of use, fast design-in through low ringing tendency, and simplified thermal management. It is qualified according to JEDEC Standard.

IPA60R180P7S Quick Information

Product Type: Power MOSFET
Series: CoolMOS P7
Canonical Name: IPA60R180P7S CoolMOS P7 Power MOSFET
Subcategory: N-Channel Power MOSFET

IPA60R180P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R180P7S Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R180P7S Features

  • 650V Drain Source Voltage rating.
  • 180mΩ maximum On-Resistance.
  • 25nC typical Gate Charge.
  • Excellent ESD robustness >2kV.
  • PG-TO220-3-FP package for through-hole.

IPA60R180P7S Applications

  • Suitable for PFC and LLC stages.
  • Used in hard and soft switching.
  • Ideal for adapters and servers.
  • Supports telecom and UPS applications.

IPA60R180P7S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain Source Voltage for the IPA60R180P7S?

The maximum Drain Source Voltage (VDS) at Tj,max is 650V.

What is the maximum On-Resistance of the IPA60R180P7S?

The maximum On-Resistance (RDS(on)) is 180mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 25nC.

What package type is the IPA60R180P7S supplied in?

The IPA60R180P7S is supplied in the PG-TO220-3-FP package.

What is the ESD robustness of the IPA60R180P7S?

The IPA60R180P7S has an ESD robustness greater than 2kV (HBM).

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