| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Quantity | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IRFP3206PBF is an N-channel Power MOSFET designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits. It offers a breakdown voltage (VDS) of 60V and a low static drain-to-source on-resistance (RDS(on)) of typically 2.4mΩ at 75A. The device is characterized by its fully specified capacitance and avalanche SOA, along with enhanced body diode dV/dt and dI/dt capability.
This MOSFET comes in a TO-247 package, suitable for through-hole mounting. Key electrical parameters include a continuous drain current of up to 200A (silicon limited) and a maximum power dissipation of 280W at 25°C. The operating junction temperature range is -55°C to +175°C. Dynamic characteristics include a total gate charge (Qg) of 120nC and fast switching times, with turn-on delay at 19ns and fall time at 83ns.
Applications benefit from its worldwide best RDS(on) in TO-247 and enhanced body diode performance. The device is designed for hard-switched and high-frequency circuits, providing reliable performance in demanding power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (V(BR)DSS) is 60V.
The typical Static Drain-to-Source On-Resistance (RDS(on)) is 2.4mΩ at VGS = 10V and ID = 75A.
The maximum continuous drain current (ID) is 200A at TC = 25°C (Silicon Limited).
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP3206PBF is supplied in a TO-247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.