| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1986 is a silicon PNP bipolar junction transistor (BJT) suitable for various electronic applications. This component is designed for through-hole mounting, facilitating integration into circuit boards.
Key electrical specifications include a maximum collector current of 15A, a collector base voltage of 230V, and an emitter base voltage of 5V. The transistor has a maximum power dissipation rating of 150W and an operating frequency of up to 30MHz. Its collector emitter saturation voltage is rated at 3V.
The maximum operating temperature for the 2SA1986 is 150°C. This transistor is part of the Power Bipolar Transistor family and is manufactured by Toshiba.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA1986 is 15A.
The collector base voltage for the 2SA1986 is 230V.
The maximum power dissipation for the 2SA1986 is 150W.
The maximum operating temperature for the 2SA1986 is 150°C.
The 2SA1986 is a Silicon PNP Transistor.
The 2SA1986 transistor is mounted using the Through Hole method.