| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,268 pcs
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5268 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1962 is a Silicon PNP Transistor suitable for various electronic applications. It features a through-hole mounting type and a 3-pin terminal configuration.
Key electrical specifications include a maximum collector current of 17A, a collector emitter voltage of 250V, and a collector base voltage of -250V. The transistor also has an emitter base voltage of -5V and can operate at frequencies up to 30MHz. Its maximum power dissipation is rated at 130W.
Thermal characteristics include a minimum operating temperature of -55°C and a maximum operating temperature of 150°C. The component is specified with a Moisture Sensitivity Level (MSL) of 1 Unlimited and a RoHS status of RoHS3 Compliant.
This transistor is part of the Bipolar Junction Transistor (BJT) family, specifically categorized under single, pre-biased transistors. Its robust specifications make it suitable for power switching and amplification circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA1962 is 17A.
The maximum collector emitter voltage for the 2SA1962 is 250V.
The maximum power dissipation for the 2SA1962 is 130W.
The 2SA1962 operates within a temperature range of -55°C to 150°C.
The 2SA1962 transistor is designed for through-hole mounting.
The RoHS status of the 2SA1962 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SA1962 is 1 Unlimited.