| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE15030G from Thomson-CSF is a silicon NPN bipolar junction transistor (BJT) designed for use as high-frequency drivers in audio amplifier applications. It features a 150V collector-emitter breakdown voltage and a maximum continuous collector current of 8A.
Key electrical specifications include a transition frequency of 30MHz and a minimum DC current gain (hFE) of 20 at 4A and 2V. The transistor has a maximum power dissipation of 50W and a collector-emitter saturation voltage of 500mV at 100mA and 1A.
This component is housed in a TO-220 package, suitable for through-hole mounting. It operates within a temperature range of -65°C to +150°C. The MJE15030G is described as Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJE15030G has a maximum collector-emitter voltage of 150V.
The MJE15030G can handle a maximum continuous collector current of 8A.
The operating temperature range for the MJE15030G is -65°C to +150°C.
The MJE15030G is available in a TO-220 package.
Yes, the MJE15030G is listed as RoHS3 Compliant.