| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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602,667 pcs
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602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1202-Y is a silicon PNP epitaxial type transistor designed for power amplifier and voltage amplifier applications. It is particularly suitable as a driver for 30 to 35-watt audio amplifiers.
Key electrical specifications include a collector-base voltage of 80V and a collector current of 0.4A. The device can handle a collector power dissipation of up to 2W when mounted on a ceramic substrate.
This transistor comes in a small flat package suitable for surface mounting (SMD). Its complementary part is the 2SC2882. The 2SA1202-Y is designed using the PCT process.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage is 80V.
The maximum collector current is 0.4A.
The power dissipation is up to 2W when mounted on a ceramic substrate.
The 2SA1202-Y is in an SMD Type package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
The REACH status is REACH Unaffected.