| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia USA Inc. 2N7002P is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a drain-source voltage rating of 60V and a continuous drain current of up to 360mA at 25°C with a gate-source voltage of 10V. The drain-source on-state resistance is a maximum of 1.6 Ohms under specific test conditions (VGS = 10V, ID = 500mA, pulsed). The gate-source voltage is rated from -20V to +20V.
This MOSFET is designed for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. It is AEC-Q101 qualified, indicating suitability for automotive applications.
The device operates within a wide ambient temperature range of -55°C to 150°C and has a maximum junction temperature of 150°C. The SOT23 package is suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
At VGS = 10V and Tamb = 25°C, the maximum drain current is 360mA.
The gate-source voltage range is -20V to 20V at 25°C.
The part is available in a SOT23 surface-mount package.
The ambient temperature range is -55°C to 150°C, with a maximum junction temperature of 150°C.
The maximum drain-source on-state resistance is 1.6Ω at VGS = 10V and ID = 500mA.
Maximum power dissipation is 350mW on standard FR4, 420mW with a 1 cm² drain pad, and 1.14W at a solder point temperature of 25°C.