BD244C/BD243C
On Semiconductor
The BD243CG is an NPN bipolar junction transistor from onsemi, designed for switching and amplifier applications. It offers a 100V collector-emitter voltage and 6A collector current.
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | 7952 | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6053 is a medium-power NPN Darlington transistor manufactured by Motorola Semiconductor. It is designed using planar technology with a monolithic Darlington configuration, providing exceptional high gain performance coupled with a very low saturation voltage.
Key electrical specifications include a Collector-Emitter Voltage (VCE) of 60V, a Collector Current (IC) of 5A, and a DC Current Gain (hFE) of 1000. The transistor also features a Peak Load Current of 8A. It operates within a junction temperature range of -65°C to +150°C.
Packaged in a TO-220 case, the 2N6053 is designed for through-hole mounting. This transistor is widely used in general switching and amplification applications where high current gain is required.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status. However, this compliance data is from an internal database and should be verified.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 60 V.
The 2N6053 is packaged in a TO-220 case.
The operating junction temperature range is -65°C to +150°C.
The typical DC current gain (hfe) is 1000.
The maximum continuous collector current (Ic) is 5 A, with a peak load current of 8 A.
Yes, the 2N6053 is an NPN Darlington configuration transistor.
