| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
175 pcs
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175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature |
The ST 2N5885 is a silicon NPN power transistor housed in a TO-3 package. It is designed for power linear and switching applications, offering a complement to the 2N5883 and 2N5884 types.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 60V and a continuous Collector Current (IC) of 25A. The device can handle peak collector currents up to 50A and a base current of 7.5A. Saturation voltages are specified at 1V (typical @ 15A/1.5A) and 4V (typical @ 25A/6.25A).
Thermal performance is supported by a maximum power dissipation of 200W at 25°C case temperature and a low junction-to-case thermal resistance of 0.875°C/W. The transistor operates within a junction temperature range of -65°C to 200°C.
Switching characteristics include a transition frequency (fT) of 4MHz (typical @ 1A/10V) and switching times such as rise time (0.7μs max), storage time (1.0μs max), and fall time (0.8μs max) under specified conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5885 is 60V.
The 2N5885 has a continuous collector current (IC) rating of 25A.
The maximum power dissipation (PD) for the 2N5885 is 200W at 25°C case temperature.
The 2N5885 is supplied in a TO-3 package.
The junction-to-case thermal resistance (Rth j-c) for the 2N5885 is 0.875°C/W.
