| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUX67C is a Silicon NPN Power Transistor manufactured by HAR. It is engineered for applications requiring high-speed switching and linear amplification, such as high-voltage operational amplifiers, switching regulators, converters, deflection stages, and high-fidelity amplifiers.
Key electrical characteristics include a maximum Collector-Base Voltage (V_CBO) of 400V and a maximum Collector-Emitter Voltage (V_CEO) of 350V. The continuous collector current (I_C) is rated at 2A, with a peak collector current (I_CP) of 5A. Power dissipation (P_D) is 35W at a case temperature of 25℃, and the junction temperature (T_J) can reach up to 200℃.
This transistor features a maximum Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.5V at 1A collector current and 0.15A base current. The DC Current Gain (h_FE) ranges from a minimum of 10 to a maximum of 150 when tested at 1A collector current and 5V collector-emitter voltage. The Current Gain-Bandwidth Product (f_T) is 25MHz at 0.5A collector current and 10V collector-emitter voltage.
The BUX67C is suitable for various electronic designs where robust power handling and fast switching capabilities are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CEO) for the BUX67C is 350V.
The continuous collector current (I_C) for the BUX67C is 2A.
The maximum power dissipation (P_D) for the BUX67C is 35W at a case temperature of 25℃.
The maximum junction temperature (T_J) for the BUX67C is 200℃.
The DC Current Gain (h_FE) for the BUX67C ranges from 10 to 150.
The Current Gain-Bandwidth Product (f_T) for the BUX67C is 25MHz.