| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX64C is a Silicon PNP Darlington Power Transistor manufactured by NXP Semiconductors. It features a high DC current gain, with a minimum hFE of 1000 at IC=-5A. The continuous collector current is rated at -12A, with a peak current of -16A. The collector-emitter voltage (VCEO) is -120V, and the collector-base voltage (VCBO) is -140V.
This transistor is designed for applications such as audio output stages and general amplifier and switching circuits. It has a maximum power dissipation of 117W at TC=25℃ and a junction temperature up to 200℃. The thermal resistance from junction to case is 1.5℃/W.
The BDX64C is packaged in a TO-3 metal case and is suitable for through-hole mounting. Electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of -2V at IC=-5A, IB=-20mA, and a base-emitter on-voltage (VBE(on)) of -2.5V at IC=-5A, VCE=-3V. Switching times are also specified, with a turn-on time of 1μs and a turn-off time of 2.5μs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous collector current is -12A and the peak collector current is -16A.
The collector-emitter voltage is -120V.
The maximum power dissipation is 117W at TC=25℃.
The maximum junction temperature is 200℃.
The DC current gain (hFE) is 1500 at IC=-1A, 1000 at IC=-5A, and 750 at IC=-12A.
The turn-on time is 1μs and the turn-off time is 2.5μs.