| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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104 pcs
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104 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4393 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by Thomson-CSF. It is designed for applications such as analog switches, choppers, and commutators. This JFET offers low noise characteristics, with a typical noise figure of 1.2 nV/√Hz.
The device has a Gate to Source Breakdown Voltage of -40V and a Drain to Source Saturation Current of 5mA. The Gate to Source Cutoff Voltage is a maximum of -3V, making it suitable for low-level power supplies. Gate leakages are typically less than 50pA at room temperature.
The 2N4393 is available in a hermetically sealed TO-18 package, suitable for military applications. It is designed for through-hole mounting.
Key electrical characteristics include a maximum continuous device power dissipation of 1800mW and a power derating of 12mW/°C. The operating junction temperature ranges from -55°C to 125°C, and storage temperature ranges from -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Gate to Source Breakdown Voltage for the 2N4393 is -40V.
The Drain to Source Saturation Current (IDSS) for the 2N4393 is a minimum of 5mA.
The maximum Gate to Source Cutoff Voltage (VGS(off)) for the 2N4393 is -3V.
The 2N4393 is available in a TO-18 package.
The 2N4393 is a through-hole mount component.
The 2N4393 has a typical noise figure of 1.2 nV/√Hz.
The gate leakage for the 2N4393 is typically less than 50pA at room temperatures.