| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,888 pcs
|
27888 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature | |
| Turn Off Time | |
| Turn On Time |
The STMicroelectronics BDW83C is a Silicon Epitaxial-Base NPN power monolithic Darlington transistor housed in a TO-218 plastic package. It is engineered for use in power linear and switching applications within industrial equipment.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 15A. It boasts a high DC current gain (hFE) and a maximum total power dissipation (Ptot) of 130W at 25°C.
The transistor features a thermal resistance junction-to-case of 0.96°C/W, ensuring efficient heat management. Its complementary PNP type is the BDW84C.
This component is suitable for demanding industrial environments requiring robust power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDW83C is 100V.
The maximum collector current (IC) for the BDW83C is 15A.
The maximum total power dissipation (Ptot) for the BDW83C at a case temperature of 25°C is 130W.
The maximum operating junction temperature (Tj) for the BDW83C is 150°C.
The BDW83C is available in a TO-218 package.
The BDW83C has a minimum DC current gain (hFE) of 750 when IC = 6A and VCE = 3V, and a maximum of 20000 under the same conditions. At IC = 15A and VCE = 3V, the minimum hFE is 100.
The maximum turn-on time (ton) for the BDW83C is 0.9µs, and the maximum turn-off time (toff) is 6µs, under specified resistive load conditions.