| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Philips BC639-16 is an NPN epitaxial silicon transistor suitable for switching and amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A.
Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at VCE = 2V and IC = 150mA, and a collector-emitter saturation voltage (VCE(sat)) of 0.5V maximum at IC = 500mA and IB = 50mA. The current gain bandwidth product (fT) is 100MHz minimum at VCE = 5V and IC = 10mA.
This transistor is housed in a TO-92 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation of 830mW at 25°C ambient temperature.
The BC639-16 is a complementary PNP transistor to the BC636, BC638, and BC640 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC639-16 transistor is 80V.
The continuous collector current rating for the BC639-16 is 1A.
The typical DC current gain (hFE) of the BC639-16 at VCE = 2V and IC = 150mA ranges from 100 to 250.
The BC639-16 transistor comes in a TO-92 package.
The operating and storage junction temperature range for the BC639-16 is -55°C to 150°C.
