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45 pcs
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45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The S8050 is an NPN epitaxial silicon transistor manufactured by R+O(宏嘉诚). It is suitable for use as a 2W output amplifier in portable radios, particularly in Class B push-pull operation. This transistor offers a maximum collector current of 1.5A and a DC current gain that can reach up to 300.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 25V and a collector-base breakdown voltage (VCBO) of 40V. The device also has a typical current gain bandwidth product (fT) of 100MHz. The S8050 is housed in a TO-92 package, making it suitable for through-hole mounting.
Its complementary part is the SS8550. The S8050 is designed for applications requiring amplification of low signals, such as audio amplifiers.
The maximum collector current is 1.5A.
The minimum collector-emitter breakdown voltage is 25V.
The S8050 comes in a TO-92 package.
The maximum power dissipation is 1W.
The DC current gain ranges from 85 to 300 at VCE = 1V and IC = 100mA.
The maximum junction temperature is 150°C.
The complementary PNP transistor is the SS8550.