2N3700UBJANTXV The Semicoa Semiconductors 2N3700UBJANTXV is an NPN silicon transistor in a hermetically sealed Cersot ceramic package. It offers a collector-emitter voltage of 80V and a continuous collector current of 1A.
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2N3700UBJANTXV

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The Semicoa Semiconductors 2N3700UBJANTXV is an NPN silicon transistor in a hermetically sealed Cersot ceramic package. It offers a collector-emitter voltage of 80V and a continuous collector current of 1A.
✓ Total Stock: 170 pcs
$ Price Range: $0.99

2N3700UBJANTXV Available from 1 distributor

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2N3700UBJANTXV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N3700UBJANTXV Description

Short technical summary and product information.

The 2N3700UBJANTXV from Semicoa Semiconductors is a general-purpose, low-power NPN silicon transistor. It is housed in a hermetically sealed Cersot ceramic package, ensuring reliability in various environments. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A.

 

This transistor features a DC current gain (hFE) ranging from 50 to 400 depending on the test conditions. It also offers a low saturation voltage, with VCEsat at 0.2V typical for 150mA collector current. Dynamic characteristics include an output capacitance (Cobo) of 12pF maximum and an input capacitance (Cibo) of 60pF maximum.

 

The 2N3700UBJANTXV is suitable for general-purpose applications where a robust and reliable NPN transistor is required. Its hermetically sealed package makes it appropriate for environments where protection against moisture and contaminants is necessary. The device also supports screening and processing per MIL-PRF-19500 Appendix E, with available qualification levels including JAN, JANTX, JANTXV, and JANS.

 

Absolute maximum ratings include a collector-base voltage (VCBO) of 140V and an emitter-base voltage (VEBO) of 7V. Power dissipation is rated at 1.16W at 25°C case temperature, with derating above that point. Operating and storage temperatures range from -65°C to +200°C.

2N3700UBJANTXV Quick Information

Product Type: NPN Transistor
Series: 2N3700
Canonical Name: 2N3700UBJANTXV Silicon NPN Transistor
Subcategory: NPN

2N3700UBJANTXV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3700UBJANTXV Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3700UBJANTXV Features

  • Hermetically sealed Cersot ceramic package.
  • 80V collector-emitter voltage rating.
  • 1A continuous collector current.
  • Wide DC current gain range.
  • Suitable for general purpose applications.

2N3700UBJANTXV Applications

  • Ideal for general purpose circuits.
  • Used in low power amplification.
  • Suitable for switching applications.
  • Robust for various environmental conditions.

2N3700UBJANTXV FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N3700UBJANTXV?

The maximum collector-emitter voltage (VCEO) for the 2N3700UBJANTXV is 80V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the 2N3700UBJANTXV is 1A.

What type of package does the 2N3700UBJANTXV come in?

The 2N3700UBJANTXV comes in a hermetically sealed Cersot ceramic package.

What is the operating temperature range?

The operating junction temperature range for the 2N3700UBJANTXV is -65°C to +200°C.

What is the typical DC current gain at 150mA collector current?

The typical DC current gain (hFE) at 150mA collector current and 10V collector-emitter voltage is 300.

What is the typical collector-emitter saturation voltage at 150mA?

The typical collector-emitter saturation voltage (VCEsat) at 150mA collector current and 15mA base current is 0.2V.

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