| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,271 pcs
|
2271 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Package / Case | |
| SVHC Present | |
| Storage Temperature | |
| Thermal Resistance |
The JANTX2N4150S from Semicoa is a silicon NPN transistor designed for general purpose and low power, high voltage applications. It features a hermetically sealed TO-39 metal can package, ensuring reliability in demanding environments.
Key electrical characteristics include a collector-emitter breakdown voltage of 70V and a continuous collector current rating of 10A. The transistor exhibits a typical DC current gain (hFE) ranging from 50 to 200 depending on the operating conditions. Switching characteristics are also specified, with delay and rise times of 50ns and storage and fall times of 1.5µs and 500ns respectively.
Semicoa offers screening and processing per MIL-PRF-19500, with qualification levels including JAN, JANTX, and JANTXV. Radiation testing is available upon request. The JANTX2N4150S is also available in a chip configuration.
This transistor is suitable for various applications requiring robust performance. Its hermetically sealed nature and military-grade processing options make it a reliable choice for critical systems.
The maximum collector-emitter voltage (VCEO) is 70V.
The maximum continuous collector current is 10A.
It is available in a TO-39 through-hole package.
The operating junction temperature range is -65°C to +200°C.
The minimum DC current gain (hFE) is 50 at IC=1A, VCE=5V.
Delay time 50 ns, rise time 500 ns, storage time 1.5 µs, fall time 500 ns at IC=5A, IB=500mA.
The maximum VCE(sat) is 0.6V at IC=5A, IB=500mA.