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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N3054 is a silicon NPN power transistor manufactured using an epitaxial base process. It is housed in a hermetically sealed metal TO-66 case, making it suitable for general purpose amplifier and switching applications.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 55V and a continuous Collector Current (IC) of 4.0A. The device offers a power dissipation of 25W for the 2N3054 variant and up to 75W for the 2N3054A variant at 25°C case temperature. The operating and storage junction temperature range is from -65°C to +200°C.
With a thermal resistance (junction-to-case) of 7.0°C/W for the 2N3054, it is designed for applications requiring robust power handling. The transistor exhibits a DC current gain (hFE) ranging from 25 to 150 at IC=500mA and VCE=4.0V. Its transition frequency (fT) is 3.0 MHz at VCE=10V and IC=200mA.
The 2N3054 is supplied in a TO-66 package, suitable for through-hole mounting. It is packaged in an antistatic coated plastic sleeve with a quantity of 30 units per sleeve.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3054 transistor is 55V.
The continuous collector current rating for the 2N3054 is 4.0A.
The 2N3054 transistor comes in a TO-66 metal case package.
The operating and storage junction temperature range for the 2N3054 is -65°C to +200°C.
The DC current gain (hFE) for the 2N3054 at IC=500mA and VCE=4.0V ranges from 25 to 150.
The transition frequency (fT) of the 2N3054 is 3.0 MHz at VCE=10V and IC=200mA.