| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation |
The 2N3571 is a silicon NPN bipolar junction transistor (BJT) manufactured by SM. It is suitable for various electronic applications requiring amplification or switching. Key electrical characteristics include a maximum collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 50mA. The device has a maximum power dissipation rating of 350mW.
This transistor is supplied in a TO-236 package, which is a small surface-mount type. The RoHS status is reported as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1, indicating unlimited shelf life under recommended storage conditions. The REACH status is noted as REACH Unaffected.
This component is part of the broader category of discrete semiconductor products, specifically within the single bipolar junction transistors, pre-biased sub-group. Its specifications suggest suitability for low-power signal processing and switching circuits where space is a consideration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the 2N3571 is 25V.
The 2N3571 transistor has a maximum continuous collector current of 50mA.
The power dissipation rating for the 2N3571 is 350mW.
The 2N3571 is supplied in a TO-236 package.
The RoHS status of the 2N3571 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N3571 is 1 Unlimited.
