| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57 pcs
|
57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The 2N3571 is a Silicon NPN Transistor manufactured by SESCOCEM. This component is designed for general-purpose applications requiring a breakdown voltage of 25V and a maximum collector current of 50mA. It offers a power dissipation rating of 350mW, making it suitable for various electronic circuits.
The transistor is housed in a TO-236 package, which is a small surface-mount type. Its electrical characteristics include a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. The power dissipation is rated at 350mW.
This component is part of the broader category of Discrete Semiconductor Products, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased subcategory. Its specifications make it a candidate for use in amplification and switching applications where these parameters are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 25V.
The maximum collector current is 50mA.
The power dissipation is 350mW.
The 2N3571 is supplied in a TO-236 package.
