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2N3571 The 2N3571 is a Silicon NPN Transistor from Texas Instruments. It features a 25V collector-emitter breakdown voltage and a 50mA maximum collector current.
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2N3571

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Mfr Name: Texas Instruments
Texas Instruments
The 2N3571 is a Silicon NPN Transistor from Texas Instruments. It features a 25V collector-emitter breakdown voltage and a 50mA maximum collector current.
✓ Total Stock: 50 pcs
$ Price Range: $0.06

2N3571 Available from 1 distributor

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2N3571 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Power Dissipation
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2N3571 Description

Short technical summary and product information.

The 2N3571 is a Silicon NPN Transistor manufactured by Texas Instruments. This component is designed for general-purpose applications and is housed in a TO-236 package.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. The device has a power dissipation rating of 350mW. These specifications make it suitable for various switching and amplification tasks in electronic circuits.

 

Further details regarding frequency characteristics, gain, and operating temperature are available in the datasheet. The TO-236 package is commonly used for surface-mount applications, offering a compact footprint for integration into dense circuit designs.

2N3571 Quick Information

Product Type: Silicon NPN Transistor
Canonical Name: 2N3571 Silicon NPN Transistor
Subcategory: NPN

2N3571 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3571 Estimated Pricing

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1+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3571 Features

  • Silicon NPN transistor from Texas Instruments.
  • 25V collector-emitter breakdown voltage.
  • 50mA maximum collector current.
  • 350mW maximum power dissipation.
  • TO-236 package for surface mounting.

2N3571 Applications

  • Suitable for high-frequency RF amplifier stages.
  • Used in microwave communication transmitter circuits.
  • Ideal for switching and signal amplification applications.
  • Applicable in low-voltage, high-speed electronic circuits.

2N3571 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N3571?

The collector-emitter breakdown voltage of the 2N3571 is 25V.

What is the maximum collector current for the 2N3571?

The maximum collector current for the 2N3571 is 50mA.

What is the power dissipation of the 2N3571 transistor?

The power dissipation of the 2N3571 is 350mW.

What package type is the 2N3571 available in?

The 2N3571 is available in a TO-236 package.

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