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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The 2N2896 from Central Technologies is an NPN silicon bipolar junction transistor (BJT). It is specified with a collector-emitter breakdown voltage of 90V and a maximum continuous collector current of 1A. This transistor is supplied in a TO-18 metal can package, suitable for through-hole mounting.
This component is designed for various electronic switching and amplification applications. Its specifications make it a versatile choice for designers working with discrete semiconductor components. The TO-18 package is a standard for many through-hole applications, offering robust thermal performance and ease of assembly.
Key electrical characteristics include its NPN transistor type, enabling specific circuit designs. The 90V breakdown voltage provides a good margin for many applications, while the 1A current handling capability supports moderate power requirements. Further details on gain, frequency response, and operating temperature would be available in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the 2N2896 is 90V.
The maximum continuous collector current for the 2N2896 is 1A.
The 2N2896 is an NPN Silicon Transistor.
The 2N2896 transistor is supplied in a TO-18 package.
